负偏压 meaning in Chinese
back bias voltage; negative bias
Examples
- Process parameters included rf power , substrate negative bias voltage , substrate temperature and working gas pressure
工艺参数有射频功率、衬底负偏压、衬底温度和工作气压等。 - At 200v of substrate negative bias voltage and 300w of rf power , the content of cubic phase in bn films reaches 92 . 8 %
当负偏压为200v ，功率为300w时，薄膜中立方相的含量达到92 . 8 。 - For obtaining cbn thin films , it is necessary that substrate negative bias voltage is not lower than 90v and r . f power is not lower than 200w
若要得到立方氮化硼薄膜，负偏压不能低于90v ，功率不能低于200w 。 - The kapton undergo dramatically degradation and the oxide coating of al or si has excellent properties for ao effects in the course of atomic oxygen beam exposures
当负偏压为200v ,镀膜时间为10min时得到的防护膜与kapton膜的结合力最好。 - Substrate negative bias voltage deeply impacts the nucleation and growth of cbn . there is a threshold value of bias voltage for depositing cbn
衬底负偏压对立方氮化硼的成核和生长有十分重要的影响，存在偏压阈值，低于该值不能产生立方氮化硼。