薄膜晶体 meaning in Chinese
thin-film transistor(tft)
Examples
- Growth orientation of poly - si film by hot - wire chemical vapor deposition
热丝法制备多晶硅薄膜晶体取向及形态的研究 - The crystal grain boundary of v2o5 films was melted and disappeared as increasing the deposition temperature , and the crystalline v2o5 films can be obtained by deposition at > 300 . these films showed excellent cathode and anodic electrochromic performance at different wavelength region
而衬底温度升高促进薄膜晶体颗粒长大、熔结，晶粒边界消失，在较高衬底温度( 300 400 ) ，得到连续的结晶性能良好的v _ 2o _ 5薄膜。 - By sufficiently making use of the knowledge of the semiconductor , we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micro mechanism , the structure of the energy band and the crystal potential field
本文充分利用半导体的能带理论，从薄膜晶体结构、能带结构和晶体势场的角度，分析载流子的迁移、散射以及载流子的产生和晶体结构缺陷对载流子的捕获。