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荧光带 meaning in Chinese

fluorescence band
fluorescent strip

Examples

  1. In order to clarify the origin of pl and enhance the luminescence efficiency of materials , the study of the relationship between preparation process and pl properties is very important
    对制备方法及其工艺参数对薄膜荧光特性影响的研究,不仅可以进一步澄清各荧光带的起因,而且也是提高材料发光性能的重要途径。
  2. Besides two pl bands located at 250 - 400nm and 650 - 700nm , two groups of distinguishable pl peaks were observed for the first time in the a - sioxny thin films , which centered at about 370nm and 730nm , respectively
    在a - sioxny薄膜中,观察到了250 - 400nm和650 - 700nm两个荧光带,并首次发现中心位于370nm和730nm的两组分立荧光峰。
  3. If an immunofluorescence stain with antibody to complement or immunoglobulin is performed , then one can see the brightly fluorescing band along the dermal epidermal junction that indicates immune complex deposits are present
    如果针对补体的抗体或免疫球蛋白进行免疫荧光染色,我们就能在表皮与真皮的交界处看到一条明亮荧光带,表明有免疫复合物的存在
  4. The intensity of distinguishable pl peaks increased with the increasing n content in the films , and the central positions of the above two pl bands were influenced by both the content of o and n . it is suggested that these pl were originated from luminescence centers related to si - o and 0 - si - n defects
    分立峰强度随薄膜中的氮含量增加而升高,荧光带中心位置受到氧、氮含量的影响,分析表明其荧光起源于si - o和n - si - o等复合缺陷组态能级间的辐射跃迁。
  5. Intense pl band at 300 - 570nm , whose central position was found red - shifted with the increase of o content , was observed in the a - sihxoy thin films fabricated by pecvd . thin films with strong blue pl peaks were prepared by plasma oxidation , and the result directly proved that the blue pl peaks were originated from si - o defect levels
    通过pecvd法与放电等离子体氧化技术结合获得了主峰位于蓝光波段的荧光带,而且具有分立峰结构,其结果直接证明了蓝光发射与缺陷能级有关,起源于si - o结合特定组态而形成的发光中心。

Related Words

  1. 荧光胺
  2. 荧光效果
  3. 荧光材料
  4. 石油荧光
  5. 荧光层
  6. 荧光功率
  7. 荧光漆
  8. 荧光染料
  9. 荧光膜
  10. 荧光基团
  11. 荧光磁性粒子探伤法
  12. 荧光淬灭
  13. 荧光代谢物
  14. 荧光单位
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