能量势垒 meaning in Chinese

energy barrier

On the basis of one - electron hartree - fock approximation , the extended - ion method and ab initio method have been used to investigate the f center migration between f ~ - layers , br ~ - layers and from f ~ - layer to br ~ - layer . we have calculated the energy barrier of these three f center migrationes and energy of f center , exciton energy . the results of f center and exciton are in good agreement with the experimential data
本文是在单电子hartree - fock近似的基础上采用扩展离子方法和全电子从头计算方法，研究了bafbr ： eu ~ ( 2 + )晶格中的f ~ -离子层间的f心迁移， br ~ -层的f心迁移和f ~ -离子与br ~ -离子层间f心迁移过程中的能量势垒和f心基态、激发态以及激子能量，对于f心和激子的研究结果与实验符合的很好。
It is showed the energy barrier is very high in transformation from h - bn to r - bn , but it is very low from r - bn to c - bn . in fact , defects and impurities in c - bn thin films might favorably drive the transformation from h - bn to c - bn . defects and impurities can reduce the energy barrier for the transformation from h - bn to r - bn
研究发现:纯的h - bn到r - bn的转变需要克服一个很高的能量势垒,而r - bn到c - bn的转变只需要克服一个很低的能量势垒; c - bn薄膜中存在的大量缺陷和杂质大大降低了从h - bn到r - bn转变所需要的能量,促进了薄膜中立方相的形成。