缺陷密度 meaning in Chinese
defect concentration
defect density
defects concentration
density of defects
Examples
- The dislocation - free , low defects densities crystal are acquired , in which the impurities concentration is decreased , their distribution are uniform , and the gaas crystal has high uniform and purity characteristics
利用m - lec法可以消除单晶中的位错，降低缺陷密度，降低单晶中的杂质含量，并能使杂质在晶体中的分布均匀，得到晶体均匀性、纯净度都高的gaas单晶。 - To hydrogenated amorphous silicon ( a - si : h ) , however , it has much less defects than non - hydrogenated a - si , for the sake of much hydrogen which eliminate the defects by making a bond with non - connected si bond . with these virtue , a - si : h accord with device quality . the films of a - si : h have widely used in solar cell , film transistor and flat display
对于氢化非晶硅( a - si : h ) ，由于氢通过无连接端的硅原子键合来消除缺陷，使得氢化非晶硅的缺陷密度比未氢化的非晶硅大大降低了，从而使氢化非晶硅符合器件级质量材料的要求。 - We researched fabrication at different asputtering and annealing atmosphere , the different process conduced different electrical properties . we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4 . the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc . there are different leakage current mechanism at influence of sil . c ; 5
研究表明，在优化工艺条件下制备的hfo _ 2介质层中，衬底注入条件下由于其较低的体和界面缺陷密度，漏电流的输运机制主要以schottky发射为主; silc效应导致hfoz / si界面缺陷态的增加，从而使得衬底注入条件下，栅泄漏电流机制不仅有schottky发射还有f一p发射机制起主要作用; 5 )初步研究了氮化的hfo : ( hroxny )栅介质的电学特征。 - By increasing the h2 dilution ratio , it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase . from the study on the distance from substrate to catalyzer , choosing a proper distance can ensure the gas fully decomposed , while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes . the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
实验结果表明：随着工作气压的减小，薄膜的晶粒尺寸有所减小；通过提高氢气稀释度，利用原子氢在成膜过程中起的刻蚀作用，可以稳定结晶相并去除杂相；选择适当的热丝距离能保证反应气体充分分解，又使衬底具有较高的过冷度，是形成纳米薄膜的重要条件；采用分步碳化法可以提高形核密度，有利于获得高质量的纳米- sic薄膜；衬底施加负偏压可以明显提高衬底表面的基团的活性，因负偏压产生的离子轰击还能造成高的表面缺陷密度，形成更多的形核位置。 - As recent research and productive practice showed , such conventional parameters as dislocation densiry ( epd ) , charge carrier concentration , mobility were not enough to evaluate the si - gaas material ' s quality , let alone revealing the relationship between the quality of material and the performance of devices . on the other hand , recent research showed that ab microdefects had direct relationship with device performance , whose density ( ab - epd ) was more important than epd for revealing the relationship between the quality of material and the performance of devices
近些年来的科研和生产实践均表明，现行的常规参数，如位错密度、载流子浓度、迁移率等对表征半绝缘砷化镓材料的质量是不充分的，特别是不能反映材料质量与器件性能之间的关系。近期的科研成果证明， ab微缺陷与器件性能有直接的关系，而且ab微缺陷密度( ab - epd )是比位错密度更加敏感、更加重要的参数。