缺陷分布 meaning in Chinese

defect distribution
failure distribution
flaw distribution

It turns out that such single - crystal ingots are no longer good enough for the job : they have too many “ defects , ” dislocations in the atomic lattice that hamper the silicon ' s ability to conduct and otherwise cause trouble during chip manufacture
然而这样一颗单晶棒已经不足以满足工作需求：它们有太多缺陷分布在原子晶格之间，这会影响矽的导电能力，而且会在晶片制造过程中带来麻烦。
The experimental results showed that firstly , the distribution of resistiveity , mobility , carrier concentration , epd and ab - epd in gaas substrate was not uniform ; secondly , the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly , mesfet devices performance correlated with ab microdefects ; last , as shown by pl mapping results , it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices
实验结果表明， lecsi - gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab - epd 、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高， pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。