缺陷中心 meaning in Chinese

defect center
defect centre

By measuring the ultraviolet - light - induced absorption coefficeint change , we believed that the ultraviolet - light induced absorption changes were ascribed to the generation of the small polarons o ( superscript - ) under the illumination of uv lights
通过对不同组份掺镁铌酸锂晶体紫外光致吸收的动态暗衰减过程的测量，我们认为掺镁铌酸锂晶体中紫外光致吸收的浅能级缺陷中心是o (上标- )小极化子。
It finds that the radicals generated in plasma control the deposition process and the main bonding configurations of films are dependent on the ratio of cf and cf2 radicals in films . the films composed of cf2 and cc bonds can be obtained at microwave power above 560 w . the frequency dependence of dielectric constant ~ ( f 1 x 10 ~ ? x 106 liz ) ii and dielectric loss tan5 ( f = lxi 02 ? 1 x 1 o5hz ) follow a power law respectively and all show decreasing trends as frequency raised
薄膜的介电频率关系（ f = 1 10 ~ 3 - 1 10 ~ 6hz ）和损耗频率关系（ f = 1 10 ~ 2 - 1 10 ~ 5hz ）均服从指数规律，随频率的增大而减小；对薄膜的电导频率关系的分析表明，这种指数规律的介电色散关系与由缺陷中心之间简单隧穿引起的跳跃导电过程有关。