缓变折射率 meaning in Chinese

graded-index

The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm . the low theshold current 2 . 9a the output power 20w at 17 . 5a have been achieved by sioi isolation , ohmic contact and facet coating processes . the central wavelength is 979nm . at the same time , model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research
激光器的生长结构采用ingaas / gaas / algaas分别限制应变单量阱线性缓变折射率波导结构，列阵条宽为4mm ，通过sio _ 2掩膜，欧姆接触和腔面镀膜等工艺，实现了阈值电流为2 . 9a ，驱动电流为17 . 5a时输出功率为20w 。