结深 meaning in Chinese
depth, junction
junction depth
Examples
- Another test method for junction depth
测试结深的另一种方法 - Then we studied the effect of junction uniformity on the aluminum - alloyed back surface field to solar cell performance . the formation theory of aluminum - alloyed back surface field , the effect parameters to the doping concentration and the junction depth were analyzed
比较了两种商业太阳电池的杂质浓度分布及结深情况；叙述了铝背场的作用及形成原理，对影响铝背场表面浓度和结深的参数作了分析。 - From then on , the above two shortcomings had been overcome . impurity concentration and junction depth can be accurately controlled and freely adjusted . both low and high dopant concentration can be gained easily , and ideal distribution of ga in si can also be achieved with uniform surface concentration , good repeatability and high eligibility and excellence ratio , which have greatly improved comprehensive performances of the devices
此工艺发明以来，克服了上述两者的弊端，杂质浓度和结深能准确控制而又能任意调整，可进行低、高浓度阶段性掺杂，得到元素ga在si中的理想分布，而且表面浓度均匀一致、重复性好、合格率和优品率高，改善和提高了器件的综合性能。 - The pixel size of p + / n - well / p - sub structure is 100 umx 100 n m , fill factor is 77 . 6 % . it can obtain target information with illuminance intensity in the range of 0 . 011x ~ 98 , 0001x , and the sensor photoelectric sensitivity is 35v / lx ? s . when the method of changeable reset frequency double scanning is used , the photoelectric dynamic range can be 139 . 8db , which is high in the 0 . 6 um level cmos image sensors already reported
在对感光单元进行器件物理结构优化的研究中，通过采用深结深光电管结构，提高了传感器的感光响应，其中p m阶”衬底结构的传感器面积为100umx100urn ，感光面积百分比为77石，可对0刀98 ， 000lx照度的目标信号进行传感，感光灵敏度大于3sv ix ? s ，采用了变频两次扫描后，动态范围可达139 - Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高