纵向电导 meaning in Chinese
longitudinal conductance, s
Examples
- Based on this and according to explain the principle of equivalent conductance plane method , point out the advantage that uses apparent portrait conductance parameter to explain the measuring depth data
在此基础上通过对等效导电平面方法原理的阐述，指出了利用视纵向电导参数进行测深资料解释的优越性。 - The ratio of light conductivity to dark conductivity of the nv - si / a - si : h photoconductor is 103 , and the light conductivity of nc - si / a - si : h photoconductor in the normal is 2 - 4 times more than that in the lateral
这种nc - si a - si ： h光导膜具有柱状结构，薄膜的光暗电导比达到10 ~ 3 ，其纵向电导率是横向电导率的2 4倍。 - The transfer of the carrier in photoconductor is anisotropy owing to the column structure of the film is anisotropy . on the basis of the new concept suggested in this paper , the maximum diffusion length in the lateral direction of the photo - carrier in the photoconductor ( which is related to the resolution of lclv directly ) as function of conductivities of both in lateral and normal directions in the film can be obtained as the expression as following . the nc - si / a - si : h photoconductor of lclv deposited and crystallized at low temperature of exactly 250 c stack column structure by al inducing a - si : h
本文根据柱状结构存在各向异性的特点，并根据半导体物理知识，推出光导层光生载流子横向最大扩散长度(该扩散长度与液晶光阀光导层分辨率直接相关)与薄膜横向和纵向电导率关系的表达式为：由于a - si ： h在al金属的诱导作用下在不高于250的温度下即开始晶化，本文对用金属al诱导非晶硅晶化制备的nc - si a - si ： h薄膜进行研究。