类功率放大器 meaning in Chinese
amplifier class a power
amplifier, class b power b
Examples
- In the end of the thesis , we came up with a measure of the ideal inverse class - f pa design which shows a way to design rfic pa in the future
文末提出了一种理想逆f类功率放大器的具体设计方法,为后续的rficpa设计提供了思路。 - The drive stage is made up of cascode class - f topology . a “ big ” mosfet is used in the class - e output stage . the thesis did the simulation of the pa by ads with the tsmc 0 . 18 m rf cmos model , and completed the layout of the pa
本文设计了一种新颖的射频cmos功率放大器,采用两级差分结构,用f类共源共栅结构作为驱动级,输出级采用大尺寸mos管的e类功率放大器。 - The bluetooth chip nrf2401 uses the gfsk modulation . after analyzing and comparing the characteristic of every class power amplifiers , the thesis bring up with the idea of using a switched mode power amplifier to achieve the demanding output power and the higher efficiency
结合“微型核”信息电子系统实现方案中nrf2401蓝牙芯片的特点,本文通过对各类功率放大器的结构和特点的分析比较,提出了采用了开关类功率放大器来实现系统输出功率要求和尽可能高的效率的设计思想。 - Next , we optimize the structure of the traditional class e power amplifier , including differential and cross - coupled feedback structure . the results by simulating the power amplifier using tsmc technology at 1 . 8ghz proves changes improved the performance efficiently , at last we finished the layout of this class e power amplifier
紧接着对传统e类功率放大器进行了优化,提出了全差分和交叉耦合结构的e类功率放大器,采用tsmc0 . 35 msigebicmos工艺对电路进行仿真,在1 . 8ghz的中心频率下,仿真结果表明优化后的结构能够较大程度的提高e类功率放大器的性能。 - Thirdly , a state - space method to model and analyze the class e power amplifier ’ s operation has been present . after the explanation on the state - space model and the design method of class e power amplifier , we implemented class e power amplifier in tsmc 0 . 35 m sige bicmos technology , the simulating results finally proves that the accuracy and feasibility of this method
在此基础上,提出了用状态空间模型来分析e类功率放大器,在阐述了e类功率放大器的状态空间模型和具体的设计方法后,用tsmc0 . 35 msigebicmos工艺验证了设计方法的可行性和准确性。