等离子体增强化学气相淀积 meaning in Chinese
plasma-enhanced cvd
Examples
- 4 . investigation are made into preparations of thin gate - oxides for strained si channel mosfet ’ s using pecvd at 300 and low - temperature ( 700 ? 800 ) thermal oxidation , respectively
4 .分别对300 c下采用等离子体增强化学气相淀积( pecvd )和700 ~ 800 c下采用热氧化技术制备sigehmos器件栅介质薄膜进行了研究。