窄禁带半导体 meaning in Chinese

narrow bandgap semiconductor

According to the current problems such as low quantum efficiency . limited available sun energy spectrum range , and inefficient recovery , resulted from the practical using of photocatalysis , using the narrowband semiconductor cds ( eg = 2 . 5ev ) to compound with tio2 seems to be an effective solution . since it will not only enlarge the region of the absorption with the proper narrow band of cds but also improve the photodegradation efficiency on account of the band overlap of the two , which makes the photo induced electron and holes separate more easily
本文针对光催化技术应用中存在的tio _ 2光催化量子效率低，吸收利用太阳能光谱范围有限，催化剂回收困难等问题，通过窄禁带半导体cds ( e = 2 . 5ev )的复合，对纳米tio _ 2进行了改性研究，一方面，由于cds的窄禁带宽度可以扩展薄膜的光谱吸收范围，另一方面，由于能带的交叠，提高了光生电子和空穴的分离效率，从而提高了薄膜的光催化降解效率。