直流特性 meaning in Chinese
direct current characteristic
Examples
- The dc characterization and ft characterization are modeled . 6 . cmos distributed amplifier is researched for the first time in the dome
6nmnmos晶体管做了直流特性和ft特性的仿真研究。 - Major contents of this study are abstracted as following : 1 . analyze the dc , thermal and dynamic characteristics of power vdmos , and propose a new equivalent circuit
论文主要工作包括: 1 .详细研究了功率vdmos的直流特性、热特性和动态特性,提出一种新的等效电路结构。 - Based on the analysis of frequency characteristic and direct current characteristic , optimized design principles and the relationship between electrical parameter and structure parameter are given
首先,通过分析sigehbt直流特性和频率特性,给出了sigehbt器件电学参数与结构参数的关系以及优化设计原则。 - The influence of sinx deposited by pecvd in different condition , especially changing deposition temperature , on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics
用sims分析结合器件直流特性测试，比较了在不同条件下淀积的氮化硅对gaas硫钝化表面的作用，特别是淀积温度分别为80 、 80 / 230 、 230时对硫钝化效果的影响。 - A sub - circuit model for vdmos is built according to its physical structure . parameters and formulas describing the device are also derived from this model . comparing to former results , this model avoids too many technical parameters and simplify the sub - circuit efficiently . as a result of numeric computation , this simple model with clear physical conception demonstrates excellent agreements between measured and modeled response ( dc error within 5 % , ac error within 10 % ) . such a model is now available for circuit simulation and parameter extraction
从vdmos的物理结构出发建立子电路模型,进而导出描述其交直流特性的参数及模型公式.相对以往文献的结果,该模型避免了过多工艺参数的引入,同时对子电路进行了有效的简化.在参数提取软件中的加载结果表明,该模型结构简单,运算速度快,物理概念清晰,拟合曲线与测试数据符合精度高(直流误差5以内,交流误差10以内) ,适于在电路模拟及参数提取软件中应用