直流溅射 meaning in Chinese
direct current sputtering
Examples
- Using jgp560c magnetron sputtering equipment , cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power , gas flow , vacuum air pressure , magnetoelectricity power and substrate temperature on deposition rate of film , discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控溅射镀膜机上，采用直流磁控溅射法在cdznte晶体上制备出cu ag合金薄膜，揭示了气体流量、直流溅射功率、励磁电源功率、工作气压和衬底温度等工艺参数对沉积速率的影响规律。结果表明溅射功率对沉积速率的影响最大，随溅射功率的增大沉积速率快速增大。 - Contrasting the results of simulation and the experiment for depositing the 3 inch thin films by icds technique , the center position of substrate and the target is in a 18mm offset , the thickness distribution homogeneity is under 8 % . based on the analyses of the theoretic heat distribution for the radiant heating system , a 3 inch size radiant heater fitting for the requirement is designed and made , whose temperature difference is under 6 %
其次，对3英寸范围内的膜厚分布进行了理论模拟，在此基础上和试验结果对比分析，发现：在倒筒靶直流溅射装置下，如果采用一种让基片中心和靶中心处于相对偏心距离为18mm的位置来制备3英寸薄膜，其膜厚分布的均匀度范围控制在8以内。 - The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film , and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique
<中文摘要> =本论文的目的是研究基片对薄膜结构和性能的影响关系，采用倒筒靶直流溅射技术在在laalo3 ( 100 )和r -平面的蓝宝石（ al2o3 ( 102 ) ）两种基片上制备出c轴取向的外延高温超导yba2cu3o7 -薄膜。