畴理论 meaning in Chinese

domain theory

Based on the transferred - electron theory of the iii - v compound semiconductor and the research on the lock - on effect of the si - gaas pcss ' s , this paper proposes the monopole charge domain model similar to the guun or high - field domain to explain the peculiar switching phenomena occurring in the lock - on mode theoretically
本文基于gaas等?族化合物半导体的转移电子理论，结合半绝缘gaas光电导开关中特有的lock - on效应的研究，提出了类似于耿畴(高场畴或偶极畴)的单极电荷畴理论模型，对光电导开关lock - on效应的各种现象给出了理论解释。
In addition , the breakdown and the degeneration of pcss " s are serious problems in the applications . in this dissertation the mode of luminous charge domain is perfected ulteriorly by deeply studying the dynamics characteristic of high - field domain of the trans - electron device with experiment stability of nonlinear pcss
本文在通过对转移电子器件偶极畴的动力学特征作了深入分析的基础上，结合非线性pcss ' s的稳定性实验，对非线性pcss ' s的光激发电荷畴理论模型作了进一步的完善。