界面态 meaning in Chinese
interface state
Examples
- Fast surface states
快界面态 - It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。 - In the experiment of photo - excited c - v characteristics of sio2 / n - sic , a ledge that had been appeared in p - type sample was observed because of the deep interface states
然后使用光照条件讨论了p和n型sicmos的界面态的性质，即p型为施主态， n型为受主态。 - It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模拟结果表明：退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。 - But the quality of its oxide is far from adequate for industrial devices . the devices need high quality of oxide film and sio2 / sic interface structure
由于其氧化层的的质量还不能达到工业生产的要求，目前关于sic表面的氧化层质量以及界面态特性仍然需要大量研究。