电流驱动能力 meaning in Chinese
current drive capability
Examples
- The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility , larger transconductance , stronger drive capability and hence faster circuit speed
与体si器件相比,采用sige材料的异质结器件已经在许多方面显示出了强大的优势:譬如更大的载流子迁移率，更大的跨导，更强的电流驱动能力以及更快的电路速度等等。 - Strained - soi mosfet , which appears recently , takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ) . it has shown advantages over bulk sample in enhanced carriers mobility , as well as higher transconductance , stronger drive capability and reduced parasitic capacitances . these properties make it a promising candidate for improving the performance of microelectronics devices
Strained - soimosfet是最近几年才出现的新型器件,它将soi材料和sige材料结合在一起,与传统体硅器件相比,表现出载流子迁移率高、电流驱动能力强、跨导大、寄生效应小等优势,特别适用于高性能、高速度、低功耗超大规模集成电路。 - After structure design aimed to high transconductance , parameters of device structure are modified in detail . the simulation results of soi nmos with strained si channel show great enhancements in drain current , effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet . the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次,根据器件参量对阈值电压和输出特性的影响,以提高器件的跨导和电流驱动能力为目的设计了strained - soimosfet器件结构,详细分析栅极类型和栅氧化层厚度、应变硅层厚度、 ge组分、埋氧层深度和厚度以及掺杂浓度的取值,对器件进行优化设计。 - In this paper , the soi technology is applied to the integrated circuit fabrication . soi technology overcomes some disadvantages of bulk silicon because of its inherent structure . it has the advantages such as no latch - up effect , low parasitic capacitance , high transconductance , simple structure , high density and good anti - radiation
Soi技术以其独特的材料结构有效地克服了体硅材料的不足，它具有无闭锁效应；漏源寄生电容小；较高的跨导和电流驱动能力；器件结构简单；器件之间距离小；集成度高；抗辐射性能优良等优点。 - By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits , type of current density ratio compensation 、 weak inversion type and type of poly gate work function , a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper . applying the negative feedback technology , an output buffer and multiply by - 2 - circuits are designed , which improve the current driving capability
然后通过比较和分析电流密度比补偿型、弱反型工作型和多晶硅栅功函数差型三种带隙电压基准源电路结构的优缺点,确定了电流密度比补偿型共源共栅结构作为本设计核心电路结构,运用负反馈技术设计了基准输出缓冲电路、输出电压倍乘电路,改善了核心电路的带负载能力和电流驱动能力。