电容变化 meaning in Chinese
change in capacitance
change in capacity
Examples
- Besides , according to the finite element method we acquire the relationship capsule is pressure , and the relationship capsule is radius . find the way to reduce linear error and increase capacitance ' s variety
另外，根据有限元方法的计算，得到了石英压力传感器的变形量大小以及压力、变形量大小与悬臂半径等之间关系，从而找到了减小线性误差和增大电容变化量的办法。 - Mems ( micro electromechanical system ) has become one of the most rapidly development technologies . along with the rapid development of mems techniques , capacitive sensor is used widely whose capacitance changes small , which has put forward the new request to the measurement technique . the common measure for capacitance measurement is that convert capacitance to voltage , electric current or frequency . the area of polar plate of the capacitor becomes smaller and smaller , and the total capacitance of micro capacitive sensor is usually several pico farad only . as a result , its change amount is smaller
Mems ( microelectromechanicalsystem )近年来发展最快的技术之一,随着mems技术的快速发展,电容式加速度计的电容变化变化量越来越小,对检测技术提出了新的要求。在电容式传感器中,常用电容检测电路是将其转换为电压、电流或者频率信号。目前的微型电容传感器的极板面积变得越来越小,电容总量只有几个pf ,变化量就更小。 - In addition , based on the analysis of the change of inter - electrode capacitances as changing working condition , a sub - circuit model for a power mosfet is developed and all model parameters can be easily extracted by data sheet . conducted emi includes two modes : differential - mode ( dm ) and common - mode ( cm )
功率mosfet的开关动态特性主要受其极间非线性电容和外部工作条件的影响，在分析了功率mosfet在开关过程中各极间电容变化的基础上，本文以小信号ldmos为内核，提出了子电路形式的功率mosfet高频模型，所有的模型参数也都可以利用产品数据曲线获得。 - In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical , symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component . in addition , the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity , wide measurement scope , less nonlinear error , and simple converting circuit . then , the structure parameters of the sensitive component were calculated and stimulated , which results in a set of the optimized structure design parameters , main fabrication procedure and several key fabrication technology
为使二维振动传感器在两主轴方向的灵敏度大致相同,敏感元件采用高度对称的四梁结构,其中每个轴向上均采用带折叠梁的双侧叉指电容结构,采用体硅微机械工艺制作的高深宽比叉指电容式敏感元件,具有高灵敏度、宽量程、非线性误差小、外围电路简单等优点;对设计的敏感元件结构参数进行了计算,并利用有限元法进行了仿真分析,根据仿真结果得出了优化参数;在确定敏感结构的基础上,研究了敏感元件采用体硅微机械加工工艺制作的工艺流程和关键工艺技术;对敏感芯片内部的c - v接口电路进行了原理设计与分析,利用差动测量技术得到由振动引起的微小电容变化量,经c - v接口电路进行相位调制处理,然后通过解调输出与加速度成正比的电压信号。