电子迁移率 meaning in Chinese
electron mobility
electron-transfer step
electronic mobility
Examples
- High electron mobility transistor hemt
高速电子迁移率晶体管 - I - v testing of a single transistor has been carried out . the p - si film is prepared by ela , and electron mobility is calculated about 30cm2 / v
对用激光晶化法制备的多晶硅薄膜所制备的p - si - tft单管进行了-测试，计算电子迁移率为约30cm ~ 2 v - Due to the good performance of gaas devices of high frequency , high electron mobility and low noise , the high frequency devices are mostly made of gaas materials now
由于gaas器件优良的高频、高电子迁移率、低噪声性能，所以现在高频器件一般都选用gaas材料。 - Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model
基于ganhemt器件物理和实验分析测试结果,发现电子迁移率与二维电子气浓度有关,并提出了一种gan电流崩塌效应的新物理模型。 - It is a good candidate for the high quality photoelectronic and microelectronic devices , such as fiber optical communication lasers , photoelectronic detectors , high electron mobility transistors and electro - optic modulators
它是制备性能优良的光电子与微电子器件，如光纤通讯激光器、光电探测器、高电子迁移率晶体管、电光调制器等的主要选择对象之一。