电子晶体管 meaning in Chinese
transistor
Examples
- The model of the set devices and circuits has been established
建立了单电子晶体管的器件和电路模型。 - Design of field - effect nano - transistors and measurement of their electrical property
场效应纳电子晶体管的构造和电学特性测量 - It is found that the height of the metal electrode , the distance between the source and drain electrodes , the thickness of the sio
研究了场效应纳电子晶体管构造过程中金属电极的结构设计，源-漏电极高度sio - 2 . in the first , the successfully fabricated si - based sets on p - type simox substrate are based on the process in china . the technology process is also offered for the controlled fabrication of single sets
利用这些纳米结构的制备技术，在p型simox硅片上成功地制造了硅量子点单电子晶体管，形成了一套制备硅单电子晶体管的工艺方法。 - Characteristic simulation is performed by using simon and pspice . the relationship between characteristics and parameters such as capacity and resistance of the set is analyzed , which provides a theoretical basis for optimal design and fabrication of devices
利用simon软件和pspice软件分别进行了一些计算机模拟分析，探索了单电子晶体管的参数与其特性的关系，为器件的优化设计和制造提供一定的理论依据。