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电子施主 meaning in Chinese

electron donor

Examples

  1. Based on the hydrodynamics energy transport model , the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density . the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet , and for both devices of different structure , the impact of n type accepted interface state on device performance is far larger than that of p type . it also manifests that the degradation is different for the device with different channel doping density . the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
    基于流体动力学能量输运模型,对沟道杂质浓度不同的深亚微米槽栅和平面pmosfet中施主型界面态引起的器件特性的退化进行了研究.研究结果表明同样浓度的界面态密度在槽栅器件中引起的器件特性的漂移远大于平面器件,且电子施主界面态密度对器件特性的影响远大于空穴界面态.特别是沟道杂质浓度不同,界面态引起的器件特性的退化不同.沟道掺杂浓度提高,同样的界面态密度造成的漏极特性漂移增大

Related Words

  1. 施主
  2. 施主角膜
  3. 电离施主
  4. 施主浓度
  5. 施主中心
  6. 浅施主
  7. 双重施主
  8. 施主分子
  9. 施主电荷
  10. 施主耗尽
  11. 电子圣诞贺卡
  12. 电子施周昼合物
  13. 电子湿度计
  14. 电子十进(分)位表
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