热电子注入 meaning in Chinese
hot electron injection
Examples
- The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique
利用衬底热电子注入技术，正电荷辅助隧穿电流可被大大的减弱。 - The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide
通过计算注入到氧化层中的电子能量和硅衬底的电场的关系表明，热电子注入和fn隧穿的不同可以用氧化层中电子的平均能量来解释。 - A novel flash memory , which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming , and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation
本论文首次提出了一种采用源极诱导带带隧穿热电子注入( sourceinducedband - to - bandtunnelinghotelectroninjection )进行编程操作的新型快闪存储器技术和一种pmos选择分裂位线nor ( pmosselecteddividedbit - linenor )快闪存贮阵列结构。