热滞 meaning in Chinese
heat stagnation
thermal hysteresis
thermal lag
thermal retardation
Examples
- On the other hand , relationship between doping concentration , phase transition temperature , magnitude of resistance change and hysteresis width was investigated
在此基础上,本文进一步探讨了掺杂浓度与vo _ 2薄膜相变温度、电阻突变数量级以及热滞宽度的关系。 - Then , the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature , magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed
( 2 )本文以掺锆为例,探讨了不同的真空退火温度对vo _ 2薄膜的相变温度、电阻突变数量级以及热滞宽度有何影响。 - 5 ) as the deformation strain increases the reverse transformation temperature and thermal hystersis of tini film increase on the first heating , while the martensitic transformation temperature decreases and r phase transition temperature is constant
随预应变量增大， tint薄膜的第一次逆相变温度升高，相变热滞增大，马氏体相变温度降低， r相变温度无明显变化。 - Results show that the increase of semiconductor - metal phase transition temperature and the decrease extent of resistance is linear to zr ~ ( 4 + ) doping content , while the hysteresis width of vo _ 2 thin film fluctuates with zr ~ ( 4 + ) doping content
实验结果表明:随zr含量的增加, vo _ 2薄膜的半导体-金属转变温度和电阻突变数量级呈线性下降,同时,随掺杂量的增加, vo _ 2薄膜的热滞宽度的变化规律是先减小后增大。