热力学稳定性 meaning in Chinese
thermodynamic stability
Examples
- Compared to other commonly referenced high - k materials , hfo2 is known for its stability on silicon and process compatibility . the fabrication and electrical properties of hfo2 and hfoxny gate are carefully studied . with the study on hfo2 . we can receive a few significative conclusion : 1
结果表明，与传统的hf清洗的si表面相比， nh _ 4f清洗的si表面与hfo _ 2具有更好的热力学稳定性，因而可获得更低的eot和栅泄漏电流密度； 3 )研究了溅射气氛和退火工艺对hfo _ 2栅介质薄膜性质的影响。 - Secondly , the sorts and weights of the components of the gel electrolyte are optimized , and a gpe with excellent performance is prepared , whose ion conductivity reachs 9 . 2ms / cm . we analyze all the factors influencing the performance of the gpe , and study many performances of the gpe , including the microstructure , conductivity performance , liquid electrolyte holding ability , electrochemical stability , thermodynamics stability , and interfacial stability between electrolyte and electrode , et al
其次，对gpe各组份进行了改进和优化，找到了最佳的配比，制备了性能良好的凝胶电解质，该gpe的室温离子电导率最高可达9 . 2ms cm ；考察了影响凝胶电解质性能的各种因素；研究了凝胶电解质的微观结构、导电性、保液性、电化学稳定性、热力学稳定性以及电解质与电极间的界面稳定性等性质。 - These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics . among all high - k gate dielectric materials , hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si , biggish constant and reasonable band alignment . our researches focus on hfo2 dielectrics
高k栅介质材料已经被广泛地研究来替代sio _ 2 ，以降低栅泄漏电流和改善可靠性，其中， hfo _ 2由于其较大的介电常数、较大的禁带宽度、与si的导带和价带较大的偏置、以及与si的高的热力学稳定性等特征，被认为是最有希望的替代sio _ 2的栅介质材料之一。