漏源电压 meaning in Chinese
drain source voltage
drain-source voltage
Examples
- The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
详细地分析了工作温度、栅极电压、漏源电压和磁场对其特性的影响，观测到明显的库仑阻塞效应和单电子隧穿效应，器件的工作温度可达到77k以上。 - In this paper , the working principle of the interleaving two - transistor forward converter is analyzed in detail , and the waveforms of the switch drain - to - source voltage and transformer magnetizing current are researched in different duty cycle conditions . the simulation model is constructed and the simulation results verify the analysis
本文分析了交错并联双管正激变换器的工作原理,研究了在不同占空比条件下开关管的漏源电压和变压器励磁电流波形,建立了仿真模型,仿真结果证明理论分析的正确性。 - We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive , hysteresis , influence of sidegating effect on mesfet threshold voltage , influence of drain - source voltage on sidegating threshold voltage , influence of exchanging drain and source electrode on sidegating threshold voltage , relation between sidegating threshold voltage and the distance between side - gate and mesfet , relation between sidegating effect and floating gate , and so on
本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、 mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。