漏极电流 meaning in Chinese

drain current

Quasi - static capacitance has been measured , when drain voltage is 0v , and gate voltage changes from ? 5v to 0v , the surface peak
采用应力测试方法,获得了algan / ganhemt漏极电流随时间的变化。
In gan hemt gate pulse experiments , drain current under pulse conditon collapsed about 47 % than direct current condition and the pulse width affected little on current collapse . the relationship between drain current and pulse frequency is ncoxw [ m + ( n + k ? ) vgs + ( n + k ? ) vgs2 ] ( vgs - vth ) 2 / l
在ganhemt栅极脉冲电流崩塌测试中,观察到栅脉冲条件下漏极电流比直流情况下减小了47 % ;随着信号频率的改变,漏极电流按ncoxw [ m + ( n + k
In gan hemt drain pulse current collapse experiments , drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse . when gate voltage is small , the relationship between pulse width and drain current is i0 ( + t / 16 )
在ganhemt漏极脉冲电流崩塌测试中,发现脉冲条件下漏极电流比直流时减小大约50 % ;脉冲信号频率对电流崩塌效应影响较小;当栅压较小时,随着脉冲宽度的改变漏极电流按i0 ( + t / 16 )的规律变化。