漂移区 meaning in Chinese
drift region
Examples
- It is represented the optimization and implementation of step drift doping profiles soi ldmos
Soi阶梯掺杂漂移区ldmos的优化设计与制备实验。 - The models currently used are either modified from low voltage mos models or based on macro model of simple polynomial established dddmos drift region resistance , both of which are limited and cannot provide a globally accurate physical model
业界目前使用的模型只是在低压mos模型基础上作一些修改,或者通过用简单多项式的形式建立dddmos漂移区电阻的宏模型以建模。 - In the model of on - resistance , we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region . then we provide the explicit dependence between on - resistance and doping distribution parameter
导通电阻模型考虑了ldmos的沟道横向杂质分布和漂移区杂质纵向分布的结构特点，给出了导通电阻与杂质分布参数的明确函数关系。 - During the research of the novel high - voltage soi lateral structure , we established its blocking theory based on poisson equation , which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state
在新型横向高压器件结构tsoi的研究中，本文通过二维泊松方程建立其解析理论，正确描述了漂移区中电场的分布，并阐明其耐压机理。 - In this thesis , the optimization of soi step drift doping profiles ldmos is addressed . the work of the author included the optimization of soi single - resurf ldmos and ; design and implementation of a step drift doping profiles soi ldmos
围绕soi阶梯掺杂ldmos器件的优化问题,本文从器件结构和工艺材料方面出发,借鉴已有理论,进行了soisingle - resurfldmos的优化研究以及soi阶梯掺杂漂移区ldmos的优化设计及器件制备实验。