淀积的 meaning in Chinese
illuvial
Examples
al and its alloys adhere well to thermally grown and to deposited silicate glasses. 铝和它的合金能很好地粘附在热生长的和淀积的硅酸盐玻璃上。 - < uk > al and its alloys adhere well to thermally grown and to deposited silicate glasses . < / uk >
< uk >铝和它的合金能很好地粘附在热生长的和淀积的硅酸盐玻璃上。 < / uk > - The influence of sinx deposited by pecvd in different condition , especially changing deposition temperature , on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics
用sims分析结合器件直流特性测试，比较了在不同条件下淀积的氮化硅对gaas硫钝化表面的作用，特别是淀积温度分别为80 、 80 / 230 、 230时对硫钝化效果的影响。 - In this paper , plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse . this research was focused on the evaluation of film growth , hardness , stress , resistance and refractive index , by changing the experimental parameters including rf power , substrate temperature , chamber pressure , and the flow rates of teos , o2 , n2 . the results showed that the p - sio2 film was smooth , dense , and structurally amorphous
实验结果显示，用pecvd法淀积的p - sio _ 2膜是一表面平坦且致密的非晶质结构的薄膜，与硅片衬底之间有良好的附着性；在中心条件时生长速率可控制在2600a / min左右；在基板温度410时有最大的硬度可达16gpa ；其应力为压缩应力，可达- 75mpa ；薄膜的临界荷重为46 . 5un 。 - The ultra - thin er layers with the thicanesses in the range of 0 . 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system . after annealing at lower temperatures , ordered simcfores form on the surface . the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )
本文是关于硅( 001 )衬底与电子束淀积的铒、铪原子反应形成的超薄膜的界面与表面性质的研究，以及在该衬底上出现的共振光电子发射现象，包括了以下四个方面的工作： 1铒导致的硅( 001 )衬底上的( 4 2 )再构研究利用反射高能电子衍射和低能电子衍射，在室温淀积了0