沟道长度 meaning in Chinese

channel length

In this paper , the factors which affect the channel length and the length of the pinch - off region of the channel are discussed , and the function of the vdmosfet is improved by optimizing the channel section
摘要讨论了影响沟道长度及沟道的夹断区长度的因素，通过沟道区的优化促进了vdmosfet性能的提高。
In order to investigate the effect of high - field hot - carrier on devices and circuits , the electrical stress experiment is carried out with 1 . 2 n m , 1 . 0 n m and 0 . 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology . by using the fresh and degraded experiment data , bsim2 model parameters are extracted
为了分析研究高场热载流子效应对器件和电路特性可靠性的影响，采用自动测试与cad技术相结合的监测系统，对国内沟道长度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet进行了电应力退化实验，并根据实验结果提取了退化前后器件的bsim2模型参数。