氮化硼薄膜 meaning in Chinese
boron nitride pellicle
Examples
- It is showed that after doping s the bn thin films of n - type conductivity are obtained
研究表明，未掺杂的氮化硼薄膜电阻率为为1 - 1 the influence of process parameters for depositing cbn films was studied all round
1系统地研究了工艺参数对制备立方氮化硼薄膜的影响。 - Preparation of high quality cubic boron nitride film by radio frequency magnetron sputtering and its characterization
高质量立方氮化硼薄膜的射频磁控溅射制备及其性能表征 - For obtaining cbn thin films , it is necessary that substrate negative bias voltage is not lower than 90v and r . f power is not lower than 200w
若要得到立方氮化硼薄膜，负偏压不能低于90v ，功率不能低于200w 。 - The refractive index ( at 632 . 8nm ) of cbn thin film with 92 . 8 % cubic phase content is measured to be2 . 19 by ellipsometer
用椭偏仪测得，对于波长为632 . 8nm的光，立方相含量为92 . 8的氮化硼薄膜的折射率为2 . 19 。