氮化法 meaning in Chinese
nitriding process
Examples
- By the essential control of the initial stage of - material growth , the high - quality crystal films can be obtained . by using mocvd technology , studies of some kinds of methods such as hydrogen - terminated , nitridation , plasma - assisted , growth of two stages and sputtering buffer layers have been conducted . by measuring of xrd , pl , sem and tem , and analysis of spectra of xrd , raman scatting , oa , and pl at different temperatures , we observed that the crystal quality has been improved markedly
本文利用mocvd技术，采用各种对si衬底处理的方法，如氢终止法、氮化法、等离子体轰击方法、两步生长法、溅射缓冲层法等进行了试验与研究，通过x射线衍射技术( xrd ) 、光致发光技术( pl ) 、扫描电子显微术( sem ) 、透射电子显微术( tem )等检测，并对其x射线衍射光谱、拉谱光谱、吸收光谱及不同温度下的光致发光光谱分析，发现外延晶体的生长质量得到了明显提高。 - Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property . many researches have been made on silicon nitride , especially on preparation for it with all kinds of cvd ( chemical vapor deposition ) . but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail , especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment
氮化硅( si _ 3n _ 4 )具有许多特殊的优越性能，是一种前景广阔的薄膜材料，并已广泛应用于微电子、光电子领域，人们对此做了大量的研究，但主要集中在用各种化学气相沉积的薄膜制备上，对直接氮化法的机理和动力学研究较少，特别是硅片在氮气保护的热处理条件下的直接氮化行为研究更少，甚至对硅片在热处理条件下能否与惰性的氮气发生反应等问题依然存在争论。