栅电压 meaning in Chinese
gate voltage
gatevoltage
Examples
- We can obtain the trap density by measuring the change of gate voltage of mos capacitance under constant current stress and the change of high frequency c - v curve before and after the stress
该方法根据电荷陷落的动态平衡方程，测量恒流应力下mos电容的栅电压变化曲线和应力前后的高频cn曲线变化求解陷阶密度。 - And the differernt characteristics of different close voltages are analyzed . at last , an experimental full bridge device is designed and some experiments are carried out . the results of the experiments show that the drive and protect circuit has excellent performances
本文还对不同关栅电压的关断特性进行了分析，最后对所设计的驱动保护电路进行了实验，结果令人满意，证明所提出的驱动保护电路的可行性。 - A model of the interface state density distribution near by valence band is presented , and the dependence of the threshold voltage on temperature , the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics , transfer characteristics and effective mobility of sic pmosfets are analyzed . thirdly , the output characteristics and the drain breakdown characteristics are modeled with the procedure medici . the output characteristics in the room temperature and 300 ? are simulated , and the effects of gate voltage . contact resistance , interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一个价带附近的界面态分布模型，用该模型较好地描述了sicpmos器件阈值电压随温度的变化关系、 c - v特性曲线以及亚阈特性曲线；分析了源漏寄生电阻对sicpmos器件输出特性、转移特性以及有效迁移率的影响；论文中用模拟软件medici模拟了sicpmos器件的输出特性和漏击穿特性，分别模拟了室温下和300时sicpmos器件的输出特性，分析了栅电压、接触电阻、界面态以及其他因素对sicpmos击穿特性的影响。 - Abstract : a new approach , gate - capacitance - shift ( gcs ) approach , is described for compact modeling . this approach is piecewise for various physical effects and comprises the gate - bias - dependent nature of corrections in the nanoscale regime . additionally , an approximate - analytical solution to the quantum mechanical ( qm ) effects in polysilicon ( poly ) - gates is obtained based on the density gradient model . it is then combined with the gcs approach to develop a compact model for these effects . the model results tally well with numerical simulation . both the model results and simulation results indicate that the qm effects in poly - gates of nanoscale mosfets are non - negligible and have an opposite influence on the device characteristics as the poly - depletion ( pd ) effects do
文摘:提出了一种新的建立集约模型的方法,即栅电容修正法.此方法考虑了新型效应对栅电压的依赖关系,且可以对各种效应相对独立地建模并分别嵌入模型中.另外,利用该方法和密度梯度模型建立了一个多晶区内量子效应的集约模型.该模型与数值模拟结果吻合.模型结果和模拟结果均表明,多晶区内的量子效应不可忽略,且它对器件特性的影响与多晶耗尽效应相反