杂质分布 meaning in Chinese
distribution of impurities
impurity distribution
Examples
- Study on the influence of grading and impurity distribution for the properties of phosphogysum
杂质分布对其性能影响的研究 - In the model of on - resistance , we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region . then we provide the explicit dependence between on - resistance and doping distribution parameter
导通电阻模型考虑了ldmos的沟道横向杂质分布和漂移区杂质纵向分布的结构特点，给出了导通电阻与杂质分布参数的明确函数关系。 - The performance of devices is directly decided by the impurity distribution in the diffused region , and the impurity distribution may be affected by the material thermal properties , the mechanism of diffusion , the power of laser and the diffusion time
激光诱导扩散过程中,基片的热物理特性、扩散源的扩散机理、激光束的功率大小和扩散时间以及光束的聚焦状况等等,都会对扩散结果产生重要的影响,而扩散层的杂质分布情况将直接决定器件的性能指标。 - At the initial stage of planar technique , b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region , and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient , the linear slowly - changed distribution of acceptor b in pn junction can not be formed , which could not cater to the requirement of high - reversal - voltage devics . thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed , while the former can lead to relatively large the base - region deviation and abruptly varied region in si , which caused severe decentralization of current amplification parameter , bad thermal stability and high tr ; the latter needed the relatively difficult pack technique , with poor repeatability , high rejection ratio , and poor diffusion quality and productio n efficiency
在平面工艺初期，由于b在硅中的固溶度、扩散系数与n型发射区的磷相匹配， sio _ 2对其又有良好的掩蔽作用，早被选为npn硅平面器件的理想基区扩散源，但b在硅中的固溶度大( 1000时达到5 10 ~ ( 20 ) ，扩散系数小， b在硅中的杂质分布不易形成pn结中杂质的线性缓变分布，导致器件不能满足高反压的要求，随之又出现了硼铝涂层扩散工艺和闭管扩镓工艺，前者会引起较大的基区偏差，杂质在硅内存在突变区域，导致放大系数分散严重，下降时间t _ f值较高，热稳定性差；后者需要难度较大的真空封管技术，工艺重复性差，报废率高，在扩散质量、生产效率诸方面均不能令人满意。 - At present , the problem in testing sheet resistance for micro - areas is that probes must be set up at the suitable locations by handwork . in order to know the wafer ' s impurity distributing , we need test many times , so will waste a lot of time . if the wafer ' s diameter would be 300mm , this problem will be more serious . in this paper , image analysis is introduced , through pre - processing and edge picking - up , the probe tips are recognized . then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors . thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity
这样，完成200mm ( 8时)圆片杂质的扩散分布需要对许多图形进行测试，需要花费很长的时间，当测试300mm硅片时问题就更为突出。本文将图象与视觉测量系统引入四探针测试系统中，对采集到的原始探针图像进行预处理、边缘提取等操作，以便实现探针针尖的识别，然后由电机控制实现探针的自动定位。这样测试系统可以自动获得全片的薄层电阻分布，为超大规模集成电路检测杂质分布和扩散的均匀性提供信息。