替位 meaning in Chinese
displacement
Examples
- We measured the samples " electrical properties ( square resistance , square carrier concentration , carrier mobility and hall coefficient ) at room temperature by hall measurement . the experimental results revealed that all the samples are p - type , with increasing the annealing temperature , the carrier mobility increased and the square carrier concentration decreased . these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing
所有样品均为p型导电类型；发现在650到850温度范围内，随着退火温度的升高，样品的方块载流子浓度呈下降趋势，而载流子迁移率呈上升趋势；这是由于在退火过程中，随着退火温度的升高，有更多的mn参与mnas相的形成，使得以替位受主形式存在的mn减少，并且晶格缺陷得到恢复所致。 - When the substrate temperature is changed from room temperature to 550 and the gas pressure is varied from 0 . 1pa to 30pa , the structures of zno thin films are c - axis oriented multi - crystalline . the landscape orientation growing speed of crystal grains is controlled mainly by depositing speed of zn and o atoms , while c - axis developing speed is chiefly dominated by depositing speed and activity of zn and o atoms
Sb _ 2o _ 3掺杂zno薄膜中sb以替位原子及化合物( sb _ 2o _ 3和zn7sb2o12 )等形式存在, zno呈混晶方式生长;掺杂薄膜在远紫外波段的吸收显著增强,吸收边变得陡峭且向短波方向移动达5nm ,在可见光波段的吸收有所增强。