晶格损伤 meaning in Chinese
lattice damage
Examples
- In addition , integrated circuits and semiconductor devices are generally made with single - side polished wafers , therefore the results of this work indicate that nanocavity - gettering technique is practical in manufacture of devices . finally , the gettering uniformity is demonstrated directly on samples . the gettering results of au to oxygen intrinsic precipitation and to the nanocavity formed by helium ion implantation were compared and discussed in this paper
本文还对实验样品中存在的氧沉积、晶格损伤对金杂质的吸除效果，与注氦诱生微孔的吸杂效果进行了比较和讨论，进一步证实了注氦诱生微孔吸除金杂质的均匀性，并加深了对微孔吸除机理的理解。 - Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature , in the range of the annealing temperature from 650 ? to 850 ? , which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing . furthermore , the square carrier concentration decreased , and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature . these results indicated that the second phase such as mnga , mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature , so the mn + ions which can provide carriers decreased
由实验结果可以知道在退火温度为650 850范围内，样品的载流子迁移率随着退火温度的提高呈上升趋势，说明杂质元素的注入对样品造成晶格损伤，但退火对这些损伤具有修复作用；此外，随着退火温度的上升，样品的方块载流子浓度不断下降，加c样品的方块电阻不断上升，这都是因为随着退火温度的提高，掺入的mn ~ +离子不再提供载流子，而是形成了mnga 、 mnas等磁性第二相。