晶体管结构 meaning in Chinese

transistor arrangement
transistor construction
transistor structure

Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit , as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons , the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale , including the discreteness of electrons . laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )
随着超大规模集成电路的的发展,半导体硅技术非常好地遵循moore定理发展,电子器件的特征尺寸越来越小;数字集成电路的芯片的集成度越来越高,电子器件由微米级进入纳米级,量子效应对器件工作的影响变的越来越重要,尺寸小于10nm将出现一些如库仑阻塞等新特性。量子效应将抑制传统晶体管fet继续按照以前的规律继续减小。在这种情况下,宏观的器件理论将被替代,可能需要采用新概念的晶体管结构。