旋转下降 meaning in Chinese
spin-down
Examples
- Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this , high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule . on the basis of this , we deeply explore method of detector fabrication . and we also studied the level and density of traps in detector . gold , indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1 . 5mm to compare different contact technologies . the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors
我们利用熔体温度振荡法在石英安瓿中将6n的单质cd 、 zn 、 te合成多晶原料，用坩锅旋转下降法在同一安瓿中生长出尺寸为20 40mm的cd _ ( 1 - x ) zn _ xte晶体。在此基础上对碲锌镉探测器的工艺进行了较深入的研究，制作了厚1 ? 1 . 5mm的探测器，测试了c 、 in 、 au等不同金属的电极接触性能，并在国内首次通过测试器件的i ? v 、 i ? t曲线、弛豫特性和电容特性对电阻率、陷阱能级、陷阱浓度进行了分析，同时测得的~ ( 241 ) am源的能谱。 - In crystal growth experiment , aggas2 crystal was growen in special quartz ampoule by crucible descending method ( b - s method ) . the equipments were used , which consist of a two - zone vertical growth furnace whose temperature gradient is tunable , a descending device with decelerating rate of 1 : 2000 , a controlling system of electy and a temperature testing system using thermal couples
晶体生长实验中，我们利用上下温度梯度可调的二温区管式生长炉， 1 2000减速比的旋转下降系统，电气控制系统和密集适时测温系统等，在特殊形状的石英生长安瓿中，采用坩埚下降法( b - s法) ，以合成的aggas _ 2多晶原料进行晶体生长。 - The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers . the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals . good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface
结果表明：材料内部的缺陷和欧姆接触是影响器件性能的两个关键因素，采用改进的富镉气氛下坩锅旋转下降法生长的晶体具有较低的缺陷浓度，适合制作探测器，采用au 、 c可得到欧姆接触。