方氮化硼 meaning in Chinese
rbn
Examples
- The influence of process parameters for depositing cbn was studied all round and showed that cbn forms in a very narrow window
系统地研究了工艺参数对立方氮化硼的影响，实验表明立方氮化硼只在很窄的窗口产生。 - Substrate negative bias voltage deeply impacts the nucleation and growth of cbn . there is a threshold value of bias voltage for depositing cbn
衬底负偏压对立方氮化硼的成核和生长有十分重要的影响，存在偏压阈值，低于该值不能产生立方氮化硼。 - In the paper , the two - step approach , in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage , was used in order to synthesize c - bn film by the conventional js - 450a rf system . the influence of process parameters for nucleation and growth of depositing c - bn was studied separately
本论文使用传统的js - 450a射频溅射系统利用两步法（降温降偏压法）沉积立方氮化硼薄膜，分别研究了各工艺参数对立方氮化硼成核和生长的影响。 - Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ) , assisted with substrate negative bias . in this paper , we primarily studied the effect of laser energy density , radio frequency power , substrate bias and depositing time on the growth of c - bn films , and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature
本文采用偏压辅助射频等离子体增强脉冲激光沉积( rf - pepld )方法在常温下( 25 )制备立方氮化硼( c - bn )薄膜，初步研究了薄膜沉积参数：激光能量密度、射频功率、基底负偏压和镀膜时间对立方氮化硼薄膜生长的影响，并分析了常温下用rf - pepld方法沉积立方氮化硼薄膜的形成过程和机理。 - The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ) , pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ) , with diameter of 2cm . in a vacuum chamber , boron nitride ( bn ) film was deposited on the single - crystal silicon substrate
利用高能脉冲激光(波长= 532nm ，频率= 1赫兹，脉宽= 10纳秒)在常温下轰击烧结的高纯六方氮化硼( h - bn )靶，在真空反应室中将bn薄膜沉积在单晶硅基底上。