方块电阻 meaning in Chinese
ohms per square
sheet resistance
Examples
- The transmittance and reflectance properties of different sheet resistance ito films have been researched in this paper
研究了不同方块电阻ito膜的透射和反射特性。 - The result is showed that the value of square resistence is 30 . 2 o in heavily doping area and 100 . 2o in lightly doping area
实验结果显示，重掺杂区和轻掺杂区的平均方块电阻分别为30 . 2和100 . 2 ，相差70 。 - A detailed analysis of the electrical properties of ato thin films was carried out in order to investigate the sb / sn atomic ratio and substrate temperature ' s influence on the ato thin film . a convictive explanation brought forward to illustrate the changing of the electrical ； properties of the ato thin film in different conditions
在温度较低时( < 500 ) ，薄膜的方块电阻随成膜温度的升高而降低；当基板温度继续升高，薄膜的方块电阻随基板温度的升高而增大，这主要是因为玻璃基板中k ~ + 、 na ~ +离子向薄膜中的扩散。 - Secondly , we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration , square resistance and carrier mobility ) . after comparing and analyzing , we can know that the electrical properties were affected by the difference of mn dose , the implantation of c and the annealing temperature
其次，利用霍尔测试方法测量了每种离子注入样品的电性质(方块载流子浓度、方块电阻及载流子迁移率) ，通过比较分析了解到mn元素注入剂量、 c元素的注入以及退火温度的不同，都会对样品的电性质产生影响。 - Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature , in the range of the annealing temperature from 650 ? to 850 ? , which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing . furthermore , the square carrier concentration decreased , and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature . these results indicated that the second phase such as mnga , mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature , so the mn + ions which can provide carriers decreased
由实验结果可以知道在退火温度为650 850范围内，样品的载流子迁移率随着退火温度的提高呈上升趋势，说明杂质元素的注入对样品造成晶格损伤，但退火对这些损伤具有修复作用；此外，随着退火温度的上升，样品的方块载流子浓度不断下降，加c样品的方块电阻不断上升，这都是因为随着退火温度的提高，掺入的mn ~ +离子不再提供载流子，而是形成了mnga 、 mnas等磁性第二相。