整流特性 meaning in Chinese
rectification characteristic
rectifying property
Examples
- It resolves bad repeatability on preparation of high cubic phase bn thin films successfully . the
实验制备的bn / si薄膜异质结的i - v曲线具有明显的整流特性,其正向伏安 - In this paper , on the basis of absorption of achievements of the research on auditory physiology , an auditory model simulationg the peripheral auditory system and part of the central auditory system is set up . the model is made of the fitlters presenting the characteristics of the basilar membrane for analyzing the voice signals , the half wave rectification modeling the inner hair cells and energy transfer of nerve fiber
在吸收听觉生理学研究成果基础上，建立了一个模拟外围听觉系统和部分中枢圣经系统功能的听觉模型。模型由表征基底膜的频率分析的带通滤波器组、内毛细胞的半波整流特性和神经纤维的能量转换特性组成，该模型可以作为前端处理来提取语音信号的自相关图谱。 - Abstract : this paper deals with the simulation result analysis of three phase synchronous generator with rectified output with stator y connected , as well as with stator connected . the curves of overlap angle , displacement angle and power factor with load are presented , and the tendency of these curves are also described
文摘:对整流负载时凸极同步发电机定子绕组及y联结仿真结果进行分析，绘出反映整流特性的换流重叠角、位移角以及功率因数随负载变化曲线，并对变化趋势进行分析。 - Different from fabricating sbd with bulk semiconductor , thin semiconductor films were utilized as the active layer in order to minimize the series resistance . si epilayer with sub - micro thickness was deposited by ultra high vauum chemical vapor deposition ( uhv - cvd ) . the sbd with rectifying performance was developed , using si epilayer as the active layer
利用我们自行研制的超高真空化学气相沉积( uhv - cvd )技术外延了亚微米级的si薄膜，成功的制作了具有整流特性的高频薄硅肖特基二极管的原型器件。 - For the first time , the energy band configuration of p - si / n - bn heterojunctions were studied and drawn up . the study of the current - voltage ( i - v ) characteristics showed significant rectifying behavior with reverse saturation current of 3 . 7 x 10 ~ 7a , breakdown voltage of 30v and turn on voltage of 14v . the capacity - voltage ( c - v ) characteristics are studied too
研究了p - si / n - bn异质结的-特性，测试表明异质结具有明显的整流特性，反向饱和电流3 . 7x10 “ ’ a ，击穿电压高达30v导通电压为14v ，应用p七en异质结能带图对其卜v特性做出了定性解释。