掺杂型 meaning in Chinese
doping type
Examples
- In this thesis , a comprehensive introduction of electric nanometer - sized powders , especially antimony doped tin oxide was provided , mainly including the development , mechanisms , types and preparation methods
本论文全面的介绍了纳米导电粉体，特别是金属氧化物掺杂型纳米导电粉体的发展概况、原理、种类以及常见的制备工艺。 - This article reviews recent progress in research on the preparation , thermal properties and orientation stability of aryl polyimide based second - order nlo materials : host - guest system , maid - chain system , side - chain system and crosslink system , and points out the study direction for future efforts
摘要综述了近年来采用芳香聚酰亚胺为骨架的主客体掺杂型、主链型、侧链型和交联型的二阶非线性光学聚合物材料在合成方法、耐热性和取向稳定性等方面的研究进展情况，并根据目前存在的问题，展望了今后的研究方向。 - Abstract : the progress in nanostructured luminescent materials has been reviewed in this paper . emphases are laid on the synthesis and characterization methods of ( rare earth ) doped nanostructured luminescent materials . in the meanwhile , the properties and applications of the nanostructured luminescent materials are introduced , and the future development trends for the nanostructured luminescent materials are forecasted in brief
文摘:本文综述了纳米发光材料的研究进展情况，着重总结了(稀土)掺杂型纳米发光材料的制备方法和表征手段，同时介绍了这些纳米发光材料的性质和应用，并对其未来发展趋势进行了展望。 - Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis . a unique method for cleaning and drying of substrate - cleaning used by scour , drying used by infrared light was fished out by large numbers of experiment . chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time . by the measurements of sem , xrd and uvs , the thin film was analysed . the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous , dense and crackfree was the crystalline phase of hexagonal wurtzite . the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm . the average transmittance of thin film in visible region was above 90 % . the results of measurements else also proved that the thickness of single dip - coating was 75 240nm , this films resistivity was found to be 3 . 105 102 3 . 96 105 ? cm . the thickness and resistivity of thin film influenced by dope - content , withdrawal speed , pre - heat - treatment , anealing were reseached respectively
利用xrd 、 sem以及uvs光谱仪等分析方法对薄膜进行了研究，结果显示，所制备的薄膜为六方纤锌矿型结构，具有高c轴择优取向性；表面均匀、致密，薄膜材料由许多星状晶粒组成，晶粒尺寸大约为10 - 30nm左右；薄膜可见光透过率平均可达90 % ；对薄膜厚度以及电学性能进行了测定后发现：单次镀膜厚度约为75 - 240nm ， al ~ ( 3 + )离子掺杂型氧化锌薄膜的电阻率在3 . 015 102 - 3 . 96 103 ? cm范围内；分别研究了掺杂浓度、提拉速度、预烧温度、退火温度等工艺参数对薄膜厚度和电阻率的影响。 - On the base of the study on si / sige hetero - junction fast switching power diode , two kinds of novel structure of sige / si pin diode are proposed in abstract this paper . the one is the gradual changing doping concentration in the n - region , and the other is sige pin diode with mesa structure
本文在对sige si异质结快速开关功率二极管的研究基础上，提出了两种sige si快速开关功率二极管的新结构： ?基区渐变掺杂型sige异质结开关功率二极管和台面结构sige异质结开关功率二极管。