掩模设计 meaning in Chinese

mask layout

A soft - ware implementing this method is presented as well , which has the capabilities of verifying standard cell layout , locating features with phase conflicts and giving out suggestions for modification
基于此方法的软件工具能够检查标准单元版图，找出不符合交替移相掩模设计要求的图形，并给出相关的修改建议。
Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool , reticule , resist exposure , development and etching , they are beneficial to develop a yield - driven layout design tool , the engineers could use it to automate the tasks of advanced mask design , verification and inspection in deep sub - micron semiconductor manufacturing
建立准确描述由于掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸变化的光刻工艺模型，有助于开发由成品率驱动的版图设计工具，自动地实现深亚微米下半导体制造中先进的掩模设计、验证和检查等任务。