投影光刻 meaning in Chinese
projection alignment
projection lithography
projection marking
projection printing
Examples
- The research results show that iil can get the high resolution more effectively than conventional optical lithography ( ol )
研究结果表明，掩模投影成像干涉光刻技术比传统投影光刻能够得到更高的光刻分辨率。 - With the furthermore development of ultra thin film technology , soft x - ray multilayer mirrors was applied in many fields , such as astronomy , microscope technology , euv lithogrphy , x - ray laser , icf diagnosis and so on
随着软x射线超薄膜制备技术的不断发展，软x射线多层膜反射镜已在多个领域中投入研究与应用，如天文学、生物医学显微镜、极紫外投影光刻技术、 x射线激光、高温等离子体诊断等等。 - Extreme ultraviolet lithography is being developed as one of the most important candidates to fabricate a sub - o . lum - pattern . in recent years , several key technologies have been developed rapidly such as laser producing plasma source , extreme ultraviolet multilayer , optical fabrication and metrology , projection - camara alignment , low - defect mask and control technology of stage
极紫外投影光刻( extremeultravioletlithography简称euvl )最有可能成为下一世纪生产线宽小于0 . 1 m集成电路的技术，近年来在激光等离子体光源、极紫外多层膜、光学加工和检测、光学精密装调、低缺陷掩模、光刻胶技术以及高稳定工作台系统控制等关键技术方面得到了飞速发展。 - Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century . this technology builds on conventional optical lithography experience and infrastructure , uses 11 - to 14 - nm photon illumination , and is expected to support multiple technology generation from 65 nm to 35 nm
极紫外投影光刻( euvl ， extremeultravioletlithography )技术作为下一代光刻技术中最佳候选技术，建立于可见/紫外光学光刻的诸多关键单元技术基础之上，工作波长为11 14nm ，适用于制造特征尺寸为65 35nm的数代超大规模集成电路，预计在2006年将成为主流光刻技术。