扩散温度 meaning in Chinese
diffusion temperature
Examples
- The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ) . it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent , doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
实验研究了快速热扩散( rtd ) ：通过旋涂磷胶和印刷磷浆两种方式考查了2 4和103 103单晶硅的快速热扩散特性，发现： 1 )此样机的温度场在空间分布上是均匀的； 2 )快速热扩散可以比传统扩散快3倍的速度进行扩散； 3 )在扩散温度和掺杂磷源相同的条件下，与传统扩散相比，快速热扩散将杂质向结更深的地方推进。 - In this paper , we computed and found the main parameter for facture of ti : linbo3 waveguide , by the function of ti diffusion profile in linbo3 , and the waveguide mode ' s cut - off condition . the parameters include waveguide width : 8 m , titanium film thickness : 50 ~ 60nm , index change : 0 . 006 , diffusion temperature : 1050 and diffusion time : 9 ~ 10 hours
本文从ti扩散特性和波导导模截止条件入手，计算并确定了制作单模ti linbo _ 3波导的主要参数，如：波导宽8 m ， ti膜厚50 60nm ，扩散温度1050 ，扩散时间9 10h等。