微波晶体管 meaning in Chinese

microwave transistor

A x band microwave limiting amplifier is realized according to the theories of the output power saturation characteristics of hemt
本课题采用微波晶体管的饱和输出特性设计了x波段限幅放大器。
The nonlinear properties of transistor in large signal condition are simulated by ads ( advanced design system ) using the nonlinear model of transistor and harmonic balance analysis technique
采用agilent公司的ads仿真软件与微波晶体管的非线性模型应用谐波平衡法仿真计算了微波晶体管在大信号条件下的非线性特性。
And then , we analyze the nonlinear properties of limiting amplifier . due to the typical nonlinear properties of limiting amplifier , we studied the method of academic analysis for microwave nonlinear circuit and the nonlinear circuit model of transistor in detail
由于微波限幅放大器的工作是典型的非线性特性,我们研究了非线性电路的分析方法和微波晶体管的非线性模型,详细得介绍了谐波平衡法这种重要的非线性电路分析方法。