应变弛豫 meaning in Chinese

deformation relaxation
strain relaxation

Strain and relaxation of mbe - hgcdte films
分子束外延薄膜的应变弛豫
In addtion , the growth rate of low temperature insb buffer layer was 0 . 26 m / h , which was obtained by rheed intensity oscillation curves . growth temperature of insb epilayers were investigated with sem and dcxrd , and it was found that the optimum temperature was 440 . a 2 . 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec , the strain relaxtion was about 99 . 02 %
通过扫描电镜形貌观察与能谱分析发现:温度较低时sb的表面迁移率低,容易在表面堆积;结合x射线双晶衍射分析,确定高温insb外延生长的最佳衬底温度为440 ,该温度下生长2 . 1 m的样品x射线半高峰宽为412 ,应变弛豫99 . 02 % 。