带隙基准 meaning in Chinese
band-gap reference
Examples
- The basis topologies for the band - gap , buried zener , and xfet references are shown in figures 1 , 2 , and 3 , respectively
关于带隙基准、掩埋齐纳二极管和xfet基准的基本拓扑如图1 、 2和3所示。 - The details of those cells are described . the actual circuit of current source , switch , bias and bandgap is presented
给出了实际的电流源、开关、偏置、带隙基准等单元子电路的设计结果以及仿真结果。 - The linear compensation bandgap reference adopted in this thesis has limited temperature stability for ignoring the influence of vbe high order items
仿真结果表明采用高阶补偿后,带隙基准源的温度系数由22 . 8ppm /减小为7 . 8ppm / 。 - According to the theory of the bandgap reference , a ptat current generator was designed , then the proportional voltage value to temperature could be achieved
利用带隙基准原理设计获得与绝对温度成正比( ptat )电流,进而获得与温度成正比的电压值。 - The article analyzed and compared the type , the merits and demerits of voltage reference , pointed out the advantages of bandgap reference ( bgr ) , and the improved configuration of bgr was chosen
对基准源的类型和优缺点进行了分析和比较,指出带隙基准源的优点,选取了改进型带隙基准源的结构。