工作气压 meaning in Chinese
working air pressure
Examples
- Process parameters included rf power , substrate negative bias voltage , substrate temperature and working gas pressure
工艺参数有射频功率、衬底负偏压、衬底温度和工作气压等。 - We studied the relationship of pressure , flux of sih4 and substrate temperature with deposition rate of a - si : h films
我们研究了工作气压、 sih _ 4气体流量和衬底温度等工艺条件与a - si : h薄膜沉积速率的关系。 - There is a threshold value of gas pressure too . cbn forms only if pressure under than o . spa . for the first time , it was found that substrate influences the depositing of cbn
对于工作气压，同样存在气压阈值，高于该阈值不能产生立方氮化硼，我们的气压阈值为0 . 8pa 。 - The influence of various factors , such as substrate bias voltage and temperature , working gas pressure , types of si wafer , etc . on the preparation of cbn has been studied systematically
系统地研究了衬底偏压、衬底温度、工作气压、 si晶片的类型等多种因素对制备cbn薄膜的影响。 - The influence arising from the anode voltage and gas pressure of gas - flow proportional counter and ambient temperature on the measuring error of the setup has been investigated by means of experiment
实际测得了流气正比计数管阳极高压、工作气压和环境温度对软x射线荧光测量装置测量误差的影响。