层生长 meaning in Chinese

layer growth

temperatures(around 950℃)will prevent stress-induced defect formation in a recessed structure(recess approximately land oxide growth approximately 2. 2μm).
温度在950上下就会避免在有凹槽的结构中形成应力诱发缺陷（凹槽约1m，氧化物层生长约22m）。
Theoretical model of thermal conductivity in frost layer
霜层生长过程中的导热模型
Single layer growth of strained epitaxy at low temperature
低温下应变外延层的单层生长
Transfer characteristics and solid layer growth in a bubble column crystallizer
气泡塔熔融结晶器中传递与晶层生长
Morphology of low temperature buffer layers and its influence on inp epilayer growth
低温缓冲层的表面形貌及对其外延层生长的影响

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